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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION With TO-220Fa package High voltage,high speed Wide area of safe operation APPLICATIONS For high voltage,high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CHA IN Base current (DC) Collector-base voltage Collector-emitter voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 1000 500 8 7 15 4 UNIT V V V A A A Open base Open collector Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Maximum operating junction temperature Storage temperature 2 W 45 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3973B SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A; IB=0.8A IC=4A; IB=0.8A 1.0 V Base-emitter saturation voltage 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 |I A IEBO Emitter cut-off current VEB=5V; IC=0 100 |I A hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V CHA IN E SEM NG OND IC TOR UC 8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3973B CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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